s., u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 thyristors TIC126M applications ? 12acontimunous on-state current ? 100a surge-current ? glass passivated ? max igt of 20ma absolute maximum ratings(ta=25'c) symbol vdrm vrrm ll(av) ij(rms) itm pgm pg tj tstg rth(j-c) rth(j-a) parameter repetitive peak off-state voltage repetitive peak reverse voltage on-state current tc=80c rms on-state current tc=80c surge peak on-state current peak gate power pw^soo u s average gate power operating junction temperature storage temperature thermal resistance, junction to case thermal resistance, junction to ambient min 600 600 7.5 12 100 5 1 110 -40-+125 2.4 62.5 unit v v a a a w w c c ?c/w c/w electrical characteristics (tc=25c unless otherwise specified) symbol irrm idrm vtm igt vgt ih parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate-trigger current gate-trigger voltage holding current conditions vrm=vrrm,tj=110c vrm=vrrm,tj=110c itm= 12a vaa=6v;rl=100n vaa=6v;rl=100q vaa=6v; rgk=1kq,lt= 100ma min typ. max 2.0 2.0 1.4 20 1.5 40 unit ma ma v ma v ma nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
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